1N, datasheet for 1N – SILICON 3-LAYER BILATERAL TRIGGERS provided by New Jersey Semi-Conductor Products, Inc.. 1N pdf. 1NA,AA. Leakage Current. IBeth Direction!). (Applied Voltage • 14 Voml NJ Semi-Conductors encourages customers to verify that datasheets are . 1N Datasheet: Silicon 3-Layer Bilateral Triggers, 1N PDF Download New Jersey Semiconductor, 1N Datasheet PDF, Pinouts, Data Sheet.

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Has selectable gain option and well characterized data that permits accurate response shaping see graph.

1N5760 Datasheet PDF – New Jersey Semiconductor

Other high voltage and Darlington transistors are also available as specials. System requirements IflStl s[t O. Motorola has the production capability and flexibility to supply devices especially tailored to specific application needs. Choppers and Switches 4. Motorola guarantees all Reference Devices to fall within the specified maxi- mum voltage variations.

The low power dissipation and flexible power supply requirements of this family of devices greatly simplify power supply design, and the high noise immunity and large fanout capability reduce parts count and simplify printed circuit board layout.

Devices are listed in order of decreasing turn-on time U.

Justification of the choice of metals for the system is provided in the discussion. MHTL circuits provide error-free operation in high noise environments far beyond the tolerance of other integrated circuit families.

This series features significantly lower power dissipation when compared to standard MECL devices. It has an electrical complement, the MCI for dual supply applications requiring positive and negative outputs.


Even when the line is divided into its two natural categories — plastic for lowest cost, and metal for hermeticity — the sheer number of devices in each category makes selection by spec-for-spec comparison a significant task. All devices may also be obtained in chip form lor the manufac- turer of hybrid microcircuits. Among these, the following should be given special attention characteristics are given in the indicated section of this Master Selection Guide: Limited temperature version MLMA is particularly attractive as general-purpose am- plifier due to low cost.

Full text of “Motorola Master Selection Guide Data Book “

These devices can also be used for Broadband Medium Power 0. Complex Functions As the areas of application for couplers grow, more complicated output functions will be required.

Improved DC volume control. These device types are recommended for exact replacement only. Cy – Nominal capacitance – Measure of the capacitance at one specified voltage Cr – Capacitance ratio – Ratio of the capacitance at two separate voltages usually at the operating ends of the CV curve.

1N5767 Datasheet

Also available are special devices for the Industrial, Computer or Consumer Markets. R 1N IN 1N MC is the same as the MCbul has a much higher transient response.

Interface components span the gap between analog information and digital process- ing. O48 1N 0, 1N 0. These devices are particularly useful in highly reliable systems using hybrid beam lead assembly techniques.

For within the large selection of different series numbers are device families with characteristics designed for specifically designated applications. For devices especially dedicated to consumer products, i. They emit infrared or visible light when forward biased. These temperature compensated Zener Reference Diodes have low dynamic impedance and siliconoxidepassivated junctions for long term stability.


Provides excellent performance and simple design for most video and communi- cations purposes. One provides watts while operating from a 28 volt supply and the other provides 80 watts from a FM IF amplifier, limiter, detector.

The devices are listed in decreasing order of V CE0 and l c continuous. The variety of different trigger devices available complicates device selection. To locate the exact page number, see Catalog IndexIPage Opan collectors or 2. Industrial products fill important roles in process control, instrumentation, and sig- nal processing functions.

The devices are listed according to increasing Current-Gain f T. For complete design data, consult the prime device data sheet. BC BC 50 20 5. Motorola has developed LSI arrays of and gate complexities with typical speeds of 25 ns per dztasheet.

Butlar MC 1 Datahseet type is given in each application heading. Family Members io ;: Standard FET devices to be introduced.

They are heavily gold doped and processed to provide very short switching times and low output capacitance below 6 pF. Designed, manufactured and tested for ultra-high stability of voltage with time and temperature change. In the power package R Suffixthe case is ground for both types allowing direct mounting on a common heat sink. Advantages over phototubes are dataeheet sensitivity, good temperature stability, and proven silicon reliability.